| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7969807 | Materials Characterization | 2016 | 8 Pages |
Abstract
The formation of 3C-SiC prepared via direct microwave heating follows the mechanism of two-dimension nucleation and laminar growth.246
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Jigang Wang, Shan Huang, Song Liu, Zhou Qing,