Validation of kinematically simulated pattern HR-EBSD for measuring absolute strains and lattice tetragonality

Based upon recent developments towards a standard material for assessing strain mapping techniques, this paper assesses the overall accuracy of the simulated pattern technique. Mismatch strains are calculated using both the real and simulated pattern techniques for a SiGe film deposited on a Si substrate. While the simulated pattern technique is not as accurate or precise as the real pattern technique for providing relative strains, it provides an estimate of absolute strain that is not available via the real pattern approach.