Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7971526 | Materials Science and Engineering: A | 2018 | 29 Pages |
Abstract
Diffusion bonding of SiC ceramic with in-situ formed SiC-TiB2 composite interlayer by reactive spark plasma sintering with B4C-Ti3SiC2-Si powder mixture was investigated. It was found that a dense composite interlayer between the SiC ceramic substrate could be obtained at 1600â¯Â°C for 10â¯min. Granular-shaped SiC with submicron-size and elongated TiB2 with micro-size were uniformly distributed in the bonding layer. The joint strength and hardness of the composite interlayer increased as the joining temperature increased up to 1600â¯Â°C due to the improved relative density and the higher fraction of elongated TiB2 phase. The grain growth and formation of micro-cracks deteriorated the mechanical strength of the 1700â¯Â°C joint. The maximum shear strength of 128.0â¯Â±â¯7.3â¯MPa was achieved for the joint bonded at 1600â¯Â°C. The toughening mechanisms of crack deflection, crack bridging and crack branching, and hardening mechanism of dual phase strengthening were observed in the morphology of indentation cracks.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Zhiquan Wang, Huaxin Li, Zhihong Zhong, Ankang Yang, Yucheng Wu,