Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
79734 | Solar Energy Materials and Solar Cells | 2011 | 6 Pages |
Abstract
A record efficiency of 15.8% (independently confirmed at Fraunhofer ISE calibration laboratory) is reported on large area (120 cm2) n-type mc-Si rear junction Si solar cell. Minor modifications to the industrial process for p-type, such as optimization of Al-alloyed screen-printed emitter and phosphorus front surface field, led to an improvement in cell properties. Large improvement in short-circuit current of the cell was possible by decreasing the cell thickness to 130 μm.
Keywords
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Authors
Sukhvinder Singh, Frederic Dross, Niels E. Posthuma, Robert Mertens,