Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
79813 | Solar Energy Materials and Solar Cells | 2010 | 6 Pages |
Abstract
Cd1−xZnxS films suitable for application in photovoltaic devices have been produced by annealing CdS films in vaporous zinc chloride and characterized by optical absorption, X-ray diffraction, energy dispersive X-ray spectroscopy and scanning electron microscopy. The incorporation of Zn in CdS was found to be dependent on the annealing temperature and duration, reaching a concentration as high as 50% (x=0.5) and producing a blue shift of 0.3 eV in bandgap energy. CdTe solar cells fabricated with Cd1−xZnxS showed substantially higher short-circuit current than the cells with CdS as the window layer. The optimal concentration of Zn was found to be around 5%. High efficiencies were obtained in SnO2/Cd1−xZnxS/CdTe cells.
Keywords
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Physical Sciences and Engineering
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Catalysis
Authors
Wei Xia, Jonathan A. Welt, Hao Lin, Hsiang N. Wu, Meng H. Ho, Ching W. Tang,