In situ measurement of bond resistance varying with process parameters during ultrasonic wedge bonding

Interconnection joints are the signal and power carriers for chip-to-package, and their electrical property determines the whole component/device performances. With the process parameters (P, F and t) varying, the bond resistance was in situ measured during ultrasonic bonding. The influence of the process parameters on the bond resistance was obvious. The measured bond resistance changed in the range from 64.5 mΩ to 72.5 mΩ with the ultrasonic power (P) increasing. The maximum change of the single bond resistance was about 4 mΩ. The causation was analyzed in two aspects, evolution of the bond interface and deformation of the bond wire. Interfacial resistance (RI) and deformation resistance (RD) were two primary parts of the variance value.