| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 79865 | Solar Energy Materials and Solar Cells | 2010 | 4 Pages |
Abstract
A monolithic high voltage 1.87 eV AlGaAs/1.65 eV AlGaAs/1.42 eV GaAs triple junction (3J) photovoltaic (PV) cell design is presented. The motivation for this particular design is to reduce resistive I2R power loss that degrades PV module efficiency, to bypass the use of limited resources such as indium and germanium, and to simplify epitaxial growth with the lattice matched AlxGa1−xAs semiconductor family.
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Authors
A.P. Kirk,