Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7986644 | Micron | 2015 | 6 Pages |
Abstract
Recent advancements in aberration-corrected electron microscopy allow for an evaluation of unexpectedly large atom displacements beyond a resolution limit of â¼0.5Â Ã
, which are found to be dose-rate dependent in high resolution images. In this paper we outline a consistent description of the electron scattering process, which explains these unexpected phenomena. Our approach links thermal diffuse scattering to electron beam-induced object excitation and relaxation processes, which strongly contribute to the image formation process. The effect can provide an explanation for the well-known contrast mismatch (“Stobbs factor”) between image calculations and experiments.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Dirk Van Dyck, Ivan Lobato, Fu-Rong Chen, Christian Kisielowski,