| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7987067 | Micron | 2013 | 7 Pages |
Abstract
⺠Sb concentration in axial GaAsSb inserts of GaAs nanowires was studied using quantitative HAADF-STEM. ⺠The Sb distribution was analysed in both axial and radial directions. ⺠Sb concentration builds up gradually along the insert and drops either gradually or abruptly, depending on the growth conditions. ⺠Sb concentration is reduced towards the outer surfaces of the nanowires. ⺠Including the static atomic displacements in the image simulations was crucial for correct compositional analysis of GaAsSb.
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Authors
H. Kauko, T. Grieb, R. Bjørge, M. Schowalter, A.M. Munshi, H. Weman, A. Rosenauer, A.T.J. van Helvoort,