Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials

This article combines two papers, “Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation,” Rev. Mod. Phys., 87 (2015) 1133, and “MOCVD of nitrides,” Handbook of Crystal Growth Second Edition, Volume III, Part A, Chapter 16, Elsevier, 683-704, 2015. For more detailed information, please read the two original papers.