Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7987964 | Solid State Communications | 2018 | 10 Pages |
Abstract
The frequency of a Gunn diode is usually determined by the length of its oscillation channel, hard to be change after the device has been fabricated. We show that in a top-gated planar nanodevice the frequency of Gunn oscillations can be conveniently increased, i.e. tuned by the top-gate bias. Ensemble Monte Carlo (EMC) simulations indicate that the achieved maximum frequency reaches 1â¯THz, about three times of that of an un-gated device. Moreover, the tunable frequency-range also increases with the length of the top-gate, resulting in a widest range of â¼0.7â¯THz. Detailed analysis of the Gunn-domain dynamics shows that this tunable effect is related to the simultaneous formation of multi-domains, which are excited by the top-gate induced non-uniformed electricfield along the oscillation channel.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Jin-Tao Pan, Yue Wang, Kun-Yuan Xu, Jian-Wen Xiong, Zhi-Lie Tang,