Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7988079 | Solid State Communications | 2018 | 20 Pages |
Abstract
The electronic structures of InSe and black phosphorus (BP) heterostructure modulated by an external electric field (Eâ¥) have been investigated based on first-principles calculations. We find that InSe/BP has type II band offset with a direct band gap of 0.39 eV, and the electrons (holes) are spatially located in InSe (BP) layer. Meanwhile, the band structures of InSe/BP can be effectively modulated by Eâ¥. The band gap shows linear variation with E⥠and its maximum of 0.69 eV is observed when E⥠is 0.4V/Ã
. The InSe/BP experiences a transition from semiconductor to metal with E⥠of â0.6 and 0.8V/Ã
. The band offsets are also modulated by Eâ¥, resulting in different spatial distribution of electron-hole pairs. Most importantly, the high carrier mobility can be preserved well under Eâ¥. Our results show that the novel InSe/BP heterostructure has great potential application in electronic and optoelectronic devices.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Yi-min Ding, Jun-jie Shi, Min Zhang, Congxin Xia, Meng Wu, Hui Wang, Yu-lang Cen, Shu-hang Pan,