Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7988384 | Intermetallics | 2018 | 5 Pages |
Abstract
We investigated magnetoresistive properties of as-deposited and annealed in magnetic field at different temperatures F/N/F trilayer films based on ferromagnetic FexNi100-x (F-layer) and nonmagnetic Cu (N-layer). The results demonstrate that spin-dependent scattering is realized both in as-deposited and annealed at 400 K trilayer films within the range of thicknesses dF = 15-40 nm and dN = 6-15 nm and at the Ni concentration in magnetic layers cNi ⤠90 wt %. The annealing at 550 K leads to the decrease of isotropic magnetoresistance value and to the appearance of anisotropy in thin films at the cNi ⥠50 wt %. It was found that the maximum value of isotropic magnetoresistance has been observed for as-deposited Fe50Ni50(30 nm)/Cu(6 nm)/Fe50Ni50(30 nm)/S thin film at room temperature. The value of isotropic magnetoresistance increases in 1.3-2.2 times with the decline of the measurement temperature from 293 to 120 Рdepending on components concentration in magnetic layers.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Yu.O. Shkurdoda, I.M. Pazukha, A.M. Chornous,