| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7988960 | Intermetallics | 2013 | 8 Pages |
Abstract
⺠Cu3Ge formation is researched as an alternative metal for interconnect technology. ⺠The process window of Cu3Ge formation by exposing Cu to GeH4 has been mapped. ⺠The reaction occurs through a selective catalytic decomposition. ⺠An in situ plasma CuO oxide clean step prior to GeH4 exposure is mandatory. ⺠Stoichiometric Cu3Ge was made on 300 mm wafers at BEOL compatible temperatures.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Antony Premkumar Peter, Laureen Carbonell, Marc Schaekers, Christoph Adelmann, Johan Meersschaut, Alexis Franquet, Olivier Richard, Hugo Bender, Tokei Zsolt, Sven van Elshocht,