Enhanced hole concentration through Ga doping and excess of Mg and thermoelectric properties of p-type Mg2(1+z)(Si0.3Sn0.7)1âyGay

Article ID	Journal	Published Year	Pages	File Type
7989224	Intermetallics	2013	10 Pages	PDF

Abstract

âº Element Ga is confirmed to be an effective p-type dopant in Mg2Si based materials. âº The excess of Mg largely increases the hole density of Mg2Si0.3Sn0.7. âº The increase in hole density by excess Mg is mainly due to antisite defects MgSi. âº The doping of Ga and excess of Mg do not have obvious effect on the band structure.

Keywords

D. Point defects A. Ternary alloy systems A. Silicides, various B. Thermoelectric properties B. Electrical resistance and other electrical properties G. Thermoelectric power generation