Article ID Journal Published Year Pages File Type
7989987 Journal of Alloys and Compounds 2018 6 Pages PDF
Abstract
A forming-free sol-gel derived ZrOx resistive switching random access memory (RRAM) is demonstrated in this paper. The ZrOx layer after annealing at 400 °C in air shows a condensed poly-crystalline structure with a significant reduction in interstitial oxygen content. The ZrOx RRAM exhibits a remarkable memory window of 103 for 500 dc switching cycles. Retention characteristic is examined to confirm the non-volatile property. The carrier conduction and resistive switching mechanisms are explored. The ZrOx RRAMs are detailedly investigated by XRD, XPS, FTIR, and SEM.
Related Topics
Physical Sciences and Engineering Materials Science Metals and Alloys
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