Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7990376 | Journal of Alloys and Compounds | 2018 | 24 Pages |
Abstract
Indium Nitride (InN) quantum dots (QDs) were synthesized on Si substrate by oblique angle deposition method. The deposited InN QDs were of the order of 5-50â¯nm in diameter with density â¼7â¯Ãâ¯109/cm2. The synthesized InN QDs were nearly single crystalline, confirmed from the diffraction peak in the <110> direction. Photoluminescence (PL) measurement showed peak emission at â¼1138â¯nm (1.08â¯eV) at 19â¯K. The PL emission energy exhibited blue shift and the intensity reduced with an increase in temperature. The high optical band gap emission of the InN QDs is possibly due to energy level quantization resulted from size reduction. The free carrier concentration was found to be â¼2â¯Ãâ¯1018â¯cmâ3. The device selectively detected the 1080â¯nm (1.13â¯eV) wavelength with maximum responsivity near the optical band edge at 10â¯K and room temperature (300â¯K) respectively. The external quantum efficiency of â¼4.1% was calculated for the detector at 10â¯K. The device showed excellent temporal response with rise and fall times of 3.181â¯s and 3.408â¯s respectively at 10â¯K.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Shyam Murli Manohar Dhar Dwivedi, Anupam Ghosh, Hemant Ghadi, Punam Murkute, P. Chinnamuthu, Shubhro Chakrabartty, Subhananda Chakrabarti, Satyaban Bhunia, Aniruddha Mondal,