Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7990884 | Journal of Alloys and Compounds | 2018 | 28 Pages |
Abstract
In this study, Crystal Violet material was used for interface layer of Schottky diode applications. Firtly, chemical cleaning process have been made for boron doped n-Si crystals. After, Al metal was coated on the one surface of crystals by thermal evaporation and crystal violet materials were coated on other surface of crystals with spin coating method (coating parameters; 800â¯rpm for 60â¯s). Lastly, Ni metal was coated on Crystal Violet by sputtering. So, we obtained the Ni/Crystal Violet/n-Si/Al Schottky type diode. After the fabrication process of diode, the current-voltage (I-V) and capacity-voltage (C-V) measurements of Ni/Crystal Violet/n-Si/Al Schottky type diode were taken for various temperatures. The some basic diode parameters such as ideality factor (n), barrier height (Φb) and series resistance (Rs) of Ni/Crystal Violet/n-Si/Al were calculated from I-V measurements using different methods (Thermionic Emission, Cheung and Norde functions). Also, diode parameters such as Fermi energy level, diffusion potential, carrier concentration and barrier height were calculated from the C-V measurements of diode as a function of temperature.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Ali Rıza Deniz, Zakir Ãaldıran, Mehmet Biber, Ãmit Ä°ncekara, Åakir AydoÄan,