Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7991271 | Journal of Alloys and Compounds | 2018 | 16 Pages |
Abstract
In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method. The Ge NCs were grown via dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing and passivated with silicon before SiO2 capping. The role of the surface passivation is to reduce the electrical defect density at the Ge NCs-SiO2 interface. The presence of the Ge NCs in the oxide of the MOS capacitors strongly affects the C-V characteristics and increases the accumulation capacitance, causes a negative flat band voltage (VFB) shift. The DLTS has been used to study the individual Ge NCs as a single point deep level defect in the oxide. DLTS reveals two main features: the first electron traps around 255â¯K could correspond to dangling bonds at the Si/SiO2 interface and the second, at high-temperature (>300â¯K) response, could be originated from minority carrier generation in Ge NCs.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
I. Jadli, M. Aouassa, S. Johnston, H. Maaref, L. Favre, A. Ronda, I. Berbezier, R. M'ghaieth,