Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7991660 | Journal of Alloys and Compounds | 2018 | 7 Pages |
Abstract
A high performance photovoltaic ultraviolet photodetector (UVPD) based on Polyvinyl carbazole (PVK)/TiO2 heterojunction with CuInS2/ZnS quantum dots (CIS-Z QDs) doped in PVK layer was fabricated in a simple method with great exhibition of high responsivity (R) and fast response. When the device is in dark, the depleted p-n heterojunction structure will lead to a low dark current density with the value of 0.05â¯Î¼A/cm2. Because of the different absorbance that the materials have, the detector has a narrow detection wavelength region from 310â¯nm to 350â¯nm. Meanwhile, due to the quantum size effect that CIS-Z QDs have, the electric-field intensity of the depletion is enhanced. Besides, the conductivity of the device has also been improved by CIS-Z QDs. Therefore, the photo-generated carrier will be effectively separated and lead to a high R and fast response with the value of 0.19 A/W and 24â¯mâ¯s. The research suggests that after doping CIS-Z QDs, organic/inorganic p-n hybrid heterojunction UVPDs possess the potential to enhance photo detection performance.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Ruiliang Xu, Shengping Ruan, Dezhong Zhang, Zhiqi Li, Bo Yin, Kanzhe Li, Jingran Zhou, Yu Chen, Chuannan Li,