Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7991799 | Journal of Alloys and Compounds | 2018 | 29 Pages |
Abstract
Dielectric materials with high energy-storage density and efficiency have great potential applications in modern electric and electronic devices. In this work, a series of 0.9(0.94Bi0.5Na0.5TiO3-0.06BaTiO3)-0.1NaNbO3 (BNT-BT-NN) ferroelectric thin films were deposited on LaNiO3 (LNO) bottom electrodes by radio-frequency (RF) magnetron sputtering technique. The effects of different annealing temperature on microstructure, dielectric property and energy-storage performance of these thin films were studied in detail. Post-deposition annealing of BNT-BT-NN thin films at an appropriate temperature of 650â¯Â°C was found to greatly improve the film structure and enhance the electrical characteristics, such as dense structure, smooth surface, low leakage current density, high breakdown strength (BDS) and large difference between maximum and remanent polarization. As a result, a huge energy-storage density of 32â¯J/cm3 and a large energy-storage efficiency of 90% were achieved under 3170â¯kV/cm in the thin film which was annealed at 650â¯Â°C. Moreover, the thin film exhibited a stable energy-storage performance under different temperature and frequency. Therefore, BNT-BT-NN thin film with proper annealing temperature is a promising candidate for high energy-storage capacitors.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Yuan Yao, Yong Li, Ningning Sun, Jinhua Du, Xiaowei Li, Liwen Zhang, Qiwei Zhang, Xihong Hao,