Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7992311 | Journal of Alloys and Compounds | 2018 | 12 Pages |
Abstract
Theoretical predictions of high hydrogen diffusivity in p-GaN layers were confirmed in many experiments for samples grown by Metalorganic Vapor Phase Epitaxy (MOVPE). In this technology, p-GaN has a high concentration of hydrogen incorporated during the growth. In this work, we confirm that also in hydrogen-free p-GaN grown by Plasma Assisted Molecular Beam Epitaxy (PAMBE) the hydrogen diffusion during H2+NH3 annealing is much higher than in n-type layers. Additionally, we have compared hydrogen diffusion for samples of different dislocation density and we have found no effect of these defects. The photoluminescence of the PAMBE-grown p-GaN exhibited the following change after annealing in H2+NH3 atmosphere: the blue luminescence decrease and yellow luminescence increase.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Robert Czernecki, Ewa Grzanka, Rafal Jakiela, Szymon Grzanka, Czeslaw Skierbiszewski, Henryk Turski, Piotr Perlin, Tadek Suski, Konstanty Donimirski, Mike Leszczynski,