Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7993059 | Journal of Alloys and Compounds | 2018 | 10 Pages |
Abstract
Delta doped GaSbBi quantum wells (QWs) grown by molecular beam epitaxy was investigated to extend light emission wavelength at room temperature with the Bi content of 7.0%. The delta-doped GaSbBi QWs transition energy shifts up to 47.0â¯meV with increasing the Te dopant concentration from 0 to 4.56â¯Ãâ¯1012â¯cmâ2, resulting in maximum light emission of 2.42â¯Î¼m, without obvious degradation of optical quality. The temperature coefficient of the band-gap for the delta-doped QW is only 0.099â¯meV/K compared with 0.265â¯meV/K from the undoped GaSbBi reference QW.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Yanchao Zhang, Li Yue, Xiren Chen, Jun Shao, Xin Ou, Shumin Wang,