Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7993790 | Journal of Alloys and Compounds | 2018 | 23 Pages |
Abstract
We report the structural and electrical properties of Li-doped ZnO (LZO) films, which are spin-coated via a simple solution process using Zn and Li precursor solutions. The Li doping improves the crystallinity of the ZnO films, and the LZO films exhibit a relatively dense and smooth surface morphology compared to that of the undoped ZnO films. Back-gated LZO thin-film transistors (TFTs) are fabricated onto a heavily p-doped Si substrate with a SiO2 gate dielectric, and operated in enhancement mode. In the case of the LZO TFT with a Li doping concentration of 0.50â¯mol%, the highest field-effect mobility of 5.18â¯cm2â¯Vâ1â¯sâ1 is obtained; the on/off current ratio and subthreshold swing are 107 and 1.2â¯V decâ1, respectively. These results demonstrate that Li doping can effectively modulate the structural and electrical properties of ZnO-based films, facilitating the fabrication of LZO TFTs with enhanced performance.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Kyuhyun Bang, Gi-Cheol Son, Myungwoo Son, Ji-Hyun Jun, Heeju An, Kwang Hyeon Baik, Jae-Min Myoung, Moon-Ho Ham,