Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7993798 | Journal of Alloys and Compounds | 2018 | 11 Pages |
Abstract
A surfactant free growth method was proposed to get thick MnSiâ¼1.7 film by exposure of Si(111) substrates to MnCl2 vapor in quartz ampoules. Prior to the growth of silicide film, an amorphous nano SiOx capping layer was introduced on the Si substrate. The capping layer changes the elemental diffusion flux to the reaction interface and facilitates the growth of single phase MnSiâ¼1.7 film. Optical absorption spectrum demonstrates the existence of a direct band gapâ¼ 0.78Â eV, which agrees well with the theoretical one obtained by density functional theory modeling.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Shuaiqi Cao, Qingjie Wang, Junhua Hu, Zhenya Fu, Kuifeng Bai, Guosheng Shao, Guoqin Cao,