Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
79943 | Solar Energy Materials and Solar Cells | 2009 | 5 Pages |
Abstract
Internal photoemission (IPE) has been successfully applied to evaluate band offsets of heterojunctions (HJs) in crystalline silicon (c-Si)-based solar cells. Tunneling of carriers through the potential spike at HJ and the presence of a carrier conduction path in the wide-band-gap material of HJ can affect the IPE results. In other words, IPE measures the effective band discontinuity, including effects of the carrier conduction path. This feature of IPE is suited for the characterization of solar-cell structures. Results obtained for hydrogenated amorphous silicon/c-Si HJ and gallium phosphide/c-Si HJ are presented and discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Isao Sakata, Mitsuyuki Yamanaka, Hitoshi Kawanami,