Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7994753 | Journal of Alloys and Compounds | 2018 | 25 Pages |
Abstract
Two-dimensional thin layers of indium selenide (InSe) have attracted much attention due to their potential applications in optoelectronics as highly responsive photo-detectors and field-effect transistors. In the present work, we explore thermal properties of InSe thin layers on a high-k substrate with a thin SiO2 passivation layer using temperature and power dependent Raman spectroscopy. The first order temperature coefficients for in-plane (E12g) and out-of-plane (A21g) modes of InSe few-layers on a Al2O3 substrate were found to be â0.00507 and â0.00310 cmâ1/K, respectively, which are much smaller than the corresponding values â0.00612 and â0.00528 cmâ1/K of similarly prepared sample on SiO2 substrate. The difference in temperature coefficients is attributed to compressive strain introduced by the Al2O3. Further, the average thermal conductivity of a 4 nm thin InSe layer on the Al2O3 substrate at room temperature was found to be â¼53.4 W/m-K, which is significantly larger than those of InSe layers prepared on SiO2 substrate (â¼28.7 W/m-K). The existed interface charges between the Al2O3 and InSe layers cause the observed improvement of thermal conductivity by electron-phonon interactions.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
V. Divakar Botcha, Mengdie Zhang, Kuilong Li, Hong Gu, Zhonghui Huang, Jianhui Cai, Youming Lu, Wenjie Yu, Xinke Liu,