Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7996676 | Journal of Alloys and Compounds | 2016 | 24 Pages |
Abstract
Bi2S3 nanoparticles (NPs) in the form of thin films were deposited on fluorine doped SnO2 (FTO) coated conducting glass substrates by successive ionic layer adsorption and reaction (SILAR) at room temperature without annealing. The absorption coefficient could reach to the order of 106Â cmâ1 in the visible and NIR region, and the highest one was 5Â ÃÂ 106Â cmâ1. The highest photocurrent density of the synthesized Bi2S3 thin films (TFs) could maintain 0.8Â mA/cm2 within 700Â s under the light intensity kept at 30Â mW/cm2. The photocurrent density is among the highest reported for any Bi2S3 photoelectrode without annealing to date. The photocurrent display little decrease during 4000Â s of testing under illumination. The n-type Bi2S3 thin films display a reasonable photoactivity and photostablity under illumination and are thus promising candidates for photoelectrochemical applications.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Ying Wang, Jiangyu Chen, Liangxing Jiang, Kaile Sun, Fangyang Liu, Yanqing Lai,