Leakage current behavior of BiFeO3/BiMnO3 multilayer fabricated by pulsed laser deposition

The temperature dependence of the J-E characteristics of BiFeO3/BiMnO3 (BFO/BMO) multilayer thin film on LaNiO3/Si substrate was studied in the temperature range from 300 K to 450 K. In the light of different models the leakage behavior of BFO/BMO multilayer thin film was analyzed, which indicates the dominant leakage mechanism is Poole-Frenkel mechanism in the medium field region from 50 to 350 kV/cm. With this Poole-Frenkel emission type conduction, the trap ionization energy range of ∼0.49 to 0.57 eV was calculated. At higher applied electric fields the conduction is space charge limited where as Ohmic conduction is the dominant mechanism in the lower electric field region for all the temperatures in the given range. Such analysis of leakage current in multilayer thin film eases interface engineering of heterostructures for FeRAM applications.