Influence of a Ni buffer layer on the optical and electrical properties of GZO/Ni bi-layered films

As-deposited GZO films that contained the PC substrate show an average optical transmittance of 81.3% in the visible wavelength region and an electrical resistivity of 3.1 × 10−3 Ω cm, while GZO/Ni bi-layered films show different optical and electrical properties that are dependent on the thickness of the Ni buffer layer. Although the GZO 100 nm/Ni 5 nm films possessed the lowest electrical resistivity (7.3 × 10−4 Ω cm) and the largest grain size (16 nm) in this study, GZO 100 nm/Ni 2 nm films showed best optoelectrical performance among the films. This superiority was due to the simultaneous optimization of the optical and electrical properties.