Synthesis of high Al content AlxGa1−xN ternary films by pulsed laser co-ablation of GaAs and Al targets assisted by nitrogen plasma

We present the synthesis of AlxGa1−xN ternary films by pulsed laser co-ablation of a polycrystalline GaAs target and a metallic Al target in the environment of nitrogen plasma which provides nitrogen for the films and assists the formation of nitride films. Field emission scanning electron microscopy exposes the smooth surface appearance and dense film structure. X-ray diffraction, Fourier-transform infrared spectroscopy and Raman scattering spectroscopy reveal the hexagonal wurtzite structure. Optical characterization shows high optical transmittance with an absorption edge of about 260 nm and a band gap of 4.7 eV. Compositional analysis gives the Al content of about 0.6. The structure and optical properties of the AlxGa1−xN films are compared with those of binary GaN and AlN films synthesized by ablating GaAs or Al target with the same nitrogen plasma assistance.