Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8000880 | Journal of Alloys and Compounds | 2014 | 4 Pages |
Abstract
We investigate the existence of Mg at an interstitial (1/2 1/2 1/2) site of Mg-deficient Mg2Si samples, whose nominal composition is Mg2âxSi (x = 0, 0.095, 0.182, 0.260, and 0.333). Single-crystal X-ray diffraction measurements indicate that the interstitial Mg (Mgi) is contained in all samples, and its occupancy is around 0.5% regardless of x. This result is supported by the Hamilton test: a hypothesis that the Mgi exists in the Mg2âxSi samples is not rejected at the significant level below 0.10. On the other hand, the Mg occupancy at an (1/4 1/4 1/4) site tends to decrease with increasing x. The Seebeck coefficient and electrical conductivity of Mg2âxSi is discussed in terms of the x dependence of Mgi (1/2 1/2 1/2) and Mg (1/4 1/4 1/4) site occupancies.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
M. Kubouchi, K. Hayashi, Y. Miyazaki,