| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8001094 | Journal of Alloys and Compounds | 2014 | 4 Pages |
Abstract
The dielectric properties of FeNbO4 ceramics were systematically investigated in the frequency range from 100Â Hz to 5Â MHz and temperature from 75 to 300Â K. It is observed that the sample exhibits colossal dielectric behavior and three dielectric relaxations. Both the low- and middle-temperature relaxations were found to be bulk effect related to localized carriers hopping. It is revealed that the low temperature relaxation is caused by the hopping motion of the self-trapped electrons and the middle temperature relaxation is related to the electrons hopping between Fe2+ and Fe3+ ions. By means of complex impedance analysis the high-temperature relaxation was argued to originate from Maxwell-Wagner relaxation due to grain boundary response.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Q.J. Li, S.Q. Xia, X.Y. Wang, W. Xia, Y. Yu, Y.M. Cui, J. Zhang, J. Zheng, C. Cheng, Y.D. Li, H. Wang, S.G. Huang, C.C. Wang,