The interface states and series resistance analyzing of Au/SiO2/n-GaAs at high temperatures

The current-voltage (I-V) characteristics of Au/SiO2/n-GaAs metal-oxide-semiconductor (MOS) type Schottky barrier diodes (SBDs) have been measured in the temperature range of 300-400 K with 25 K steps. From the I-V characteristics of SBDs, the zero-bias barrier height ϕBo and ideality factor (n) assuming the thermionic emission (TE) mechanism show strong temperature dependence. While n decreases, ϕBo increases with increasing temperature. The obtained values of ϕBo and n varied from 0.81 eV and 1.33 at 300 K and 0.93 eV and 1.12 at 400 K, respectively. In addition, the interface states distribution profile (Nss) as a function of temperature was extracted from the forward-bias I-V measurements by taking into account the bias dependence of the effective barrier height ϕe and series resistance (Rs) for the SBDs. The values of Rs were performed using the Cheung's method. Thus, important electrical parameters as a function of temperature were analyzed by using the I-V measurements.