| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 80051 | Solar Energy Materials and Solar Cells | 2008 | 8 Pages |
Abstract
Analysis of the composition, strain-relaxation, layer-tilt, and the crystalline quality of InyGa1−yAs/InP1−xAsx thermophotovoltaic (TPV) diodes grown by metal-organic vapor phase epitaxy (MOVPE) is demonstrated using triple-axis X-ray reciprocal space mapping techniques. In0.53Ga0.47As (Egap=0.74 eV) n/p junction diodes are grown lattice matched (LM) to InP substrates and lattice-mismatched (LMM) In0.67Ga0.33As (Egap=0.6 eV) TPV diodes are grown on three-step InP1−xAsx (0
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Authors
M.W. Dashiell, H. Ehsani, P.C. Sander, F.D. Newman, C.A. Wang, Z.A. Shellenbarger, D. Donetski, N. Gu, S. Anikeev,