Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
80067 | Solar Energy Materials and Solar Cells | 2008 | 8 Pages |
Abstract
The optical properties and etch rates of silicon nitride (SiNx:H) deposited by plasma-enhanced chemical vapour deposition (PECVD) and their correlation with bond concentrations have been studied. By varying the silane-to-total gas ratio, films with refractive index (n) between 1.92 and 3.00 were deposited. Higher n films had increased absorption and decreased etch rates. Annealing the samples at different temperatures revealed that all films were thermally stable up to 750 °C, above which all experienced a rise in n, attributed mainly to mass densification. The etch rate correlated well the N–H bond concentration for both annealed and as-deposited films.
Related Topics
Physical Sciences and Engineering
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Authors
Daniel N. Wright, Erik S. Marstein, Atle Rognmo, Arve Holt,