| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 80123 | Solar Energy Materials and Solar Cells | 2010 | 5 Pages |
Abstract
A simple correction method to eliminate the effect from series resistance and inductance on admittance spectra is presented. The method is based on obtaining adequate values for the series resistance, shunt resistance and inductance. These values are a result of a fit of the admittance of a simplified circuit including a specific function representing the defect levels of both the capacitance and the conductance. With these values the solar cell admittance can be calculated from the experimental data and thus a defect density of states can be obtained. This method is demonstrated both on numerical data simulated by scaps and on experimental data for a CIGS solar cell.
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Authors
J. Lauwaert, K. Decock, S. Khelifi, M. Burgelman,