Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8012385 | Materials Letters | 2018 | 10 Pages |
Abstract
In this work, a Li-doped indium-tin-zinc-oxide (ITZO:Li) thin film transistor was investigated. The ITZO:Li active channel layer was deposited on an SiO2/Si substrate by radio frequency magnetron sputtering at room temperature. The micro structure of the active channel layer is amorphous, as confirmed by X-ray diffraction patterns. The transmittance of the films is above 80% for the visible region (400-700â¯nm), which indicates excellent optical transparency. The band gap energy of films annealed at 325â¯Â°C is about 3.71â¯eV from the absorption spectrum. It was demonstrated that TFTs fabricated using Li-doped ITZO have fewer oxygen vacancies and enhanced mobility compared to that of undoped ITZO TFTs. The obtained TFTs operate in enhancement mode with a threshold voltage of 0.4â¯V, a saturation mobility of 39.1â¯cm2â¯Vâ1â¯sâ1, and an on/off current ratio of 8.0â¯Ãâ¯106.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ran Li, Shiqian Dai, Yaobin Ma, Longjie Tian, Qi Wang, Dongzhan Zhou, Xiqing Zhang,