Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8012556 | Materials Letters | 2018 | 14 Pages |
Abstract
At the present work, a novel two-stage method for the synthesis of zinc oxide (ZnO) films with silicon quantum dots embedded (SiQDs-ZnO) is reported. The experimental procedure consisting on ZnO matrix produced by the sol-gel technique and silicon quantum dots (Si-QDs) synthesized by a green synthesis is described. The incorporation of the Si-QDs on the ZnO films was obtained by spin coating followed by a post-deposition air annealing at 400â¯Â°C. The XPS results show that the Si-QDs were successfully embedded in the ZnO matrix. The effect of the tunable bandgap (Eg) of the ZnO with the addition of Si-QDs was obtained which is consistent with the Burstein-Moss effect. The enhancement of the photoluminescence (PL) of the ZnO films with the increment of Si content is presented.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
H.J. Higuera-Valenzuela, F. Romo-GarcÃa, D. Cabrera-German, A. Ramos-Carrazco, R. Rosas-Burgos, R. GarcÃa-Gutierrez, O.E. Contreras, D. Berman-Mendoza,