| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8012649 | Materials Letters | 2018 | 4 Pages |
Abstract
The effect of dual nitridation processes for both r-plane sapphire and low temperature-grown AlN (LT-AlN) nucleation layer on non-polar a-plane AlGaN epi-layer was studied intensively. A root-mean-square value as small as 1.54â¯nm for a-plane Al0.53Ga0.47N epi-layer was achieved. It was revealed that the generation of AlN grains as well as the coalescence and recrystallization of LT-AlN islands were the key factors for growing a-plane AlGaN epi-layers with smooth surface morphology. Meanwhile, the evolution of surface morphology with varied nitridation processes and the mechanisms for improving surface morphology of a-plane AlGaN epi-layers were also investigated.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jianguo Zhao, Xiong Zhang, Shuai Chen, Jiaqi He, Aijie Fan, Zili Wu, Shuchang Wang, Yushen Liu, Jinfu Feng, Yiping Cui,