Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8012786 | Materials Letters | 2018 | 9 Pages |
Abstract
We have fabricated 6â¯+â¯1-filament MgB2 wires using an internal Mg diffusion (IMD) process. For the 3 at% graphene (G) doped long wire with 1.4â¯mm diameter, the critical current is about 530â¯A at 4â¯T, which is 45% higher than that of the undoped sample. Moreover, the G doped wire has higher irreversible strain of 38% in comparison to the undoped one of 30% after 650â¯Â°Câ¯Ãâ¯2â¯h annealing. The obtained results show that the G doped IMD wires with excellent superconductivity and mechanical property can compete with the conventional PIT wires in practical application.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Haoran Liu, Qingyang Wang, Fang Yang, Lihua Jin, Xiaomei Xiong, Jianqing Feng, Chengshan Li, Lian Zhou,