| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8012814 | Materials Letters | 2018 | 4 Pages |
Abstract
Vanadium oxide is a type of material with high temperature coefficient of resistance (TCR) for bolometric infrared detection. In this letter, the effects of growth conditions of B-phase crystalline VO2, including reaction temperature, reaction time and quantities of precursors, were systematically investigated. Free-standing VO2(B) thin film composed of nano-sheets stacking on the (0â¯0â¯1) plane was prepared. The in-plane and out-of-plane TCRs were measured. A superior in-plane TCR of â3.0%/K was observed at room temperature, while the out-of-plane TCR only was â1.7%/K. We further showed that the I-V behavior of VO2(B) was voltage-dependent, and its possible origin was discussed.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Changkang Gao, Xiaohong Xie, Ruihui He, Bing Yu, Bujun Wu, Zhi Luo, Pengyi Liu, Keqiu Chen, Weiguang Xie,