Article ID Journal Published Year Pages File Type
8012822 Materials Letters 2018 4 Pages PDF
Abstract
For the first time, H2O2 was used in CdS thin films deposition by Chemical Bath Deposition method. With the oxidant, a more compact CdS films were fabricated. The average grain size decreases from 88 nm to 15 nm with the increasing concentration of H2O2 that was used in CdS deposition. The growth mechanism has been discussed in view of the reaction between H2O2 and Cd clathrate in solution. The fill factor of CdS/CdTe device deposited on oxygenated CdS film increases about 18%.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
Authors
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