Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8012822 | Materials Letters | 2018 | 4 Pages |
Abstract
For the first time, H2O2 was used in CdS thin films deposition by Chemical Bath Deposition method. With the oxidant, a more compact CdS films were fabricated. The average grain size decreases from 88â¯nm to 15â¯nm with the increasing concentration of H2O2 that was used in CdS deposition. The growth mechanism has been discussed in view of the reaction between H2O2 and Cd clathrate in solution. The fill factor of CdS/CdTe device deposited on oxygenated CdS film increases about 18%.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Bin Lv, Bo Yan, Pinggen Cai, Yun Li, Fan Gao, Ziran Ye, Zhong Lu, Chenghua Sui, Pinwen Huang,