| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8013350 | Materials Letters | 2018 | 12 Pages |
Abstract
In this letter, we report the structural and optoelectronic properties of chromium-doped Cu2ZnSnS4 (CZTS:Cr) deposited by co-sputtering technique. Addition of chromium was observed to deteriorate the Cu2ZnSnS4 crystallinity as well as inducing the growth of cubic-ZnCr2S4 secondary phase. Grain size as large as 0.5â¯Âµm was observed for the doped sample. Bandgap was found to vary (1.51-1.70â¯eV), whereas the deep level defect state was calculated to be positioned at 0.20-0.33â¯eV above the valence band maximum (VBM) depending on the chromium concentration.
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Authors
M.M.I. Sapeli, M.T. Ferdaous, S.A. Shahahmadi, K. Sopian, P. Chelvanathan, N. Amin,