Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8014394 | Materials Letters | 2018 | 4 Pages |
Abstract
Hybrid films composed of GaN nanowires and GaN films were prepared on sapphire substrates by chemical vapor deposition. The GaN films and GaN nanowires are all indexed to the hexagonal wurtzite structure. The photoluminescence spectra of GaN nanowire-film hybrid films are composed of a strong ultraviolet emission peak (365â¯nm) and a weak yellow luminescence band (â¼600â¯nm). The UV detector based on GaN nanowire-film hybrid films shows a high responsivity ofâ¯â¼2.5â¯A/W at 360â¯nm and a fast response speed ofâ¯â¼22â¯Î¼s.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Rui Sun, Gui-Gen Wang, Zheng-Chun Peng,