Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8014627 | Materials Letters | 2018 | 4 Pages |
Abstract
Thin film of silicon is an interesting material for many technological applications in electronic industry and in energy harvesting technologies, but requires a method for controlled growth of thin films. The purpose of this study is to screen a wide variety of Si content precursors for Si atomic layer deposition (ALD) reactions using state-of-the-art density-functional calculations. Among the studied 85 Si content precursors we found that C7H12OSi-Methoxy-trivinyl-silane and C7H9NSi-Benzyliminosilane show positive indications for ALD reactivity for Si deposition. We believe that this finding will be helpful to develop low-cost, high-energy efficiency thin-film solar cells for future scale up implementation in photovoltaics.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
P. Vajeeston, H. Fjellvåg, O. Nilsen,