Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8014660 | Materials Letters | 2018 | 4 Pages |
Abstract
0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) ferroelectric thin films were epitaxially integrated on GaN (0002) substrates by pulsed laser deposition. La0.5Sr0.5CoO3 (LSCO)/TiO2 buffer layers are designed to decrease the lattice mismatch between PMN-PT and GaN, which promotes the epitaxial growth of pure perovskite PMN-PT (111) thin films. Meanwhile, LSCO/TiO2 heterostructures could be served as the bottom electrodes for integrated ferroelectric devices. Epitaxial relationship of the multilayer is determined to be (111)[11¯0] PMN-PT//(111)[11¯0] LSCO//(100)[001] TiO2//(0002)[112¯0] GaN. The integrated PMN-PT (111) films exhibit good ferroelectric and dielectric properties with remanent polarization of 11.3â¯Î¼C/cm2, coercive field of 34.1â¯kV/cm at 100â¯Hz, dielectric constant of 2035 and dielectric tunability of 68.1% at 1â¯kHz, which make it a potential candidate for the applications in GaN-based integrated ferroelectric devices.
Related Topics
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Materials Science
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Authors
Guanjie Li, Xiaomin Li, Zhijie Bi, Yongbo Chen, Xiaoke Xu,