| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8014780 | Materials Letters | 2018 | 12 Pages |
Abstract
CuO/ZnO:Al photo-diode has been fabricated by spray pyrolysis technique. The prepared sample characterized by FESEM images, XRD and UV-Visible spectra, also I-V measurements in dark and under illumination. We found that, the investigated layers have a polycrystalline structure with optical band gaps of 3.25â¯eV and 1.63â¯eV for ZnO and CuO layers, respectively. Electrical characterization of the sample showed a rectifying behavior in dark, with an ideality factor of 5.8â¯Â±â¯0.1, and under illumination in reverse bias at 1.5â¯V, the photo-generated current was more than twice of its dark current.
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Authors
Mehdi Torabi Goodarzi, Hosein Eshghi,