Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8015639 | Materials Letters | 2018 | 10 Pages |
Abstract
A high performance, low operating voltage organic field effect transistor (OFET) has been fabricated by utilizing organically modified silicate (ormosil) based film as dielectric. The ormosil film is fabricated by a sol-gel method at low temperature (180â¯Â°C) and exhibits a high dielectric (kâ¯=â¯33), a smooth surface (Rqâ¯=â¯0.29â¯nm) and a low leakage current density (5â¯Ãâ¯10â9â¯Aâ¯cmâ2 at â2â¯V). The ormosil film contains hydrophobic methyl (CH3) functional groups derived from methyltriethoxysilane (MTES) and these groups produce a surface with hydrophobic character and low surface energy for pentacene film growth. The OFET with the ormosil dielectric exhibits excellent performs with high mobility (0.80â¯cm2â¯Vâ1â¯sâ1), low operating voltage (â1.5â¯V), low threshold voltage (â0.25â¯V) and low sub-threshold swing (192â¯mVâ¯decâ1). The result demonstrates that the ormosil film can be used as a high performance dielectric for OFETs, and provides a promising way for low power and low cost organic electronics.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jiaxing Hu, Wenxiu Que, Zhili Chen, Jinyou Shao,