Fabrication of n-Cu2O films by anodisation and their photoelectrochemical properties

In this paper, Cu2O films were prepared by an anodisation method in 1.0 wt% NH3·H2O electrolyte. The influence of preparation conditions on photoelectrochemical properties was investigated. Results show that anodisation voltage and reaction time exerted significant influence on semiconductor types and photocurrent values. Only under the conditions of appropriate voltage and time could n-Cu2O films be prepared. When the voltage was 10 V and anodisation time was 30 to 90 min, the films had a larger oxidation photocurrent (n-type semiconductor), with a current density of −101 μA/cm2 to −143 μA/cm2. The reasons for formation of n-Cu2O films have been discussed.